? semiconductor components industries, llc, 2015 january, 2015 ? rev. 8 1 publication order number: MJE5730/d MJE5730, mje5731, mje5731a high voltage pnp silicon plastic power transistors these devices are designed for line operated audio output amplifier, switch?mode power supply drivers and other switching applications. features ? popular to?220 plastic package ? pnp complements to the tip47 thru tip50 series ? these devices are pb?free and are rohs compliant* maximum ratings rating symbol value unit collector?emitter voltage MJE5730 mje5731 mje5731a v ceo 300 350 375 vdc collector?base voltage MJE5730 mje5731 mje5731a v cb 300 350 375 vdc emitter?base voltage v eb 5.0 vdc collector current ? continuous i c 1.0 adc collector current ? peak i cm 3.0 adc base current i b 1.0 adc total device dissipation @ t c = 25 c derate above 25 c p d 40 0.32 w w/ c total device dissipation @ t c = 25 c derate above 25 c p d 2.0 0.016 w w/ c unclamped inducting load energy (see figure 10) e 20 mj operating and storage junction temperature range t j , t stg ?65 to +150 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. thermal characteristics characteristics symbol max unit thermal resistance, junction?to?case r jc 3.125 c/w thermal resistance, junction?to?ambient r ja 62.5 c/w *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. 1.0 ampere power transistors pcp silicon 300?350?400 volts 50 watts to?220 case 221a?09 style 1 1 www. onsemi.com marking diagram 2 3 mje573x = device code x = 0, 1, or 1a g = pb?free package a = assembly location y = year ww = work week mje573xg ay ww see detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. ordering information 4 1 base 3 emitter collector 2, 4
MJE5730, mje5731, mje5731a www. onsemi.com 2 electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector?emitter sustaining voltage (note 1) (i c = 30 madc, i b = 0) MJE5730 mje5731 mje5731a v ceo(sus) 300 350 375 ? ? ? vdc collector cutoff current (v ce = 200 vdc, i b = 0) MJE5730 (v ce = 250 vdc, i b = 0) mje5731 (v ce = 300 vdc, i b = 0) mje5731a i ceo ? ? ? 1.0 1.0 1.0 madc collector cutoff current (v ce = 300 vdc, v be = 0) MJE5730 (v ce = 350 vdc, v be = 0) mje5731 (v ce = 400 vdc, v be = 0) mje5731a i ces ? ? ? 1.0 1.0 1.0 madc emitter cutoff current (v be = 5.0 vdc, i c = 0) i ebo ? 1.0 madc on characteristics (note 1) dc current gain (i c = 0.3 adc, v ce = 10 vdc) (i c = 1.0 adc, v ce = 10 vdc) h fe 30 10 150 ? ? collector?emitter saturation voltage (i c = 1.0 adc, i b = 0.2 adc) v ce(sat) ? 1.0 vdc base?emitter on voltage (i c = 1.0 adc, v ce = 10 vdc) v be(on) ? 1.5 vdc dynamic characteristics current gain ? bandwidth product (i c = 0.2 adc, v ce = 10 vdc, f = 2.0 mhz) f t 10 ? mhz small?signal current gain (i c = 0.2 adc, v ce = 10 vdc, f = 1.0 khz) h fe 25 ? ? product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 1. pulse test: pulse width 300 s, duty cycle 2.0%. v ce , collector-emitter voltage (volts) t j = 25 c 0.03 figure 1. dc current gain i c , collector current (amps) 2.0 0.02 0.03 0.05 0.1 0.2 0.5 1.0 2.0 30 10 3.0 figure 2. collector?emitter saturation voltage 0.02 i c , collector current (amps) 0 0.05 0.3 1.2 h fe , dc current gain 5.0 v ce = 10 v 1.0 2.0 1.4 1 t j = 150 c 20 0.5 0.3 0.8 0.6 0.1 v ce(sat)) @ i c /i b = 5.0 0.2 0.2 0.4 25 c -55 c 100 50 200 150 c -55 c
MJE5730, mje5731, mje5731a www. onsemi.com 3 i c , collector current (amps) 1.0 0.8 v, voltage (v) 1.4 1.2 0.4 0 0.6 0.2 figure 3. base?emitter voltage 0.05 0.2 2.0 0.1 0.5 0.3 1.0 0.02 0.03 v be(sat) @ i c /i b = 5.0 t j = - 55 c 25 c 150 c derating factor 1.0 0 t c , case temperature ( c) 0 50 175 0.8 0.6 0.4 0.2 75 100 125 figure 4. normalized power derating second breakdown derating thermal derating 25 150 10 5.0 figure 5. forward bias safe operating area v ce , collector-emitter voltage (volts) 5.0 2.0 0.5 0.01 30 100 bonding wire limit thermal limit second breakdown limit i c , collector current (amp) dc 500 s 0.05 10 20 1.0ms 200 300 50 0 1.0 0.2 50 0.1 0.02 t c = 25 c 100 s MJE5730 mje5731 mje5732 there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 5 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 6. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. t, time (ms) 1.0 0.01 1 k 0.3 0.2 0.07 r(t), transient thermal r jc(t) = r(t) r jc r jc = 3.125 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) jc(t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 0.01 resistance (normalized) 0.7 figure 6. thermal response 0.5 0.1 0.05 0.03 0.02 0.02 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 0.2 single pulse d = 0.5 0.05 0.1 0.02 0.01
MJE5730, mje5731, mje5731a www. onsemi.com 4 t 2 figure 7. switching time equivalent circuit turn-on pulse v be(off) v in ap- prox. -11 v 0 v t 3 turn-off pulse t 1 7.0 ns 100 t 2 < 500 s t 3 < 15 ns approx. +9.0 v duty cycle 2.0% v cc v in r c r b scope +4.0 v c jd << c eb 51 t 1 t, time (s) t, time (s) 0.02 0.2 2.0 0.1 0.05 0.5 1.0 5.0 i c , collector current (amps) t j = 25 c v cc = 200 v i c /i b = 5.0 2.0 1.0 0.5 0.2 0.1 0.05 figure 8. turn?on resistive switching times figure 9. resistive turn?off switching times i c , collector current (amps) 0.01 1.0 0.5 0.1 0.05 0.02 0.02 0.2 2.0 0.1 0.05 0.5 1.0 t r t d t s t f t j = 25 c v cc = 200 v i c /i b = 5.0 0.2 0.03 0.3 0.03 0.3 0.3 3.0 0.03 0.3 input 50 50 v bb1 = 10 v r bb2 = 100 tut v ce monitor 100 mh v cc = 20 v + - r bb1 = 150 i c monitor r s = 0.1 v bb2 = 0 + - test circuit voltage and current waveforms input voltage collector current collector voltage v ce(sat) 10 v v cer 0 v 0.63 a -5 v 0 v 100 ms t w 3 ms (see note 1) figure 10. inductive load switching mje171
MJE5730, mje5731, mje5731a www. onsemi.com 5 ordering information device package shipping MJE5730g to?220 (pb?free) 50 units / rail mje5731g to?220 (pb?free) 50 units / rail mje5731ag to?220 (pb?free) 50 units / rail
MJE5730, mje5731, mje5731a www. onsemi.com 6 package dimensions to?220 case 221a?09 issue ah style 1: pin 1. base 2. collector 3. emitter 4. collector notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.415 9.66 10.53 c 0.160 0.190 4.07 4.83 d 0.025 0.038 0.64 0.96 f 0.142 0.161 3.61 4.09 g 0.095 0.105 2.42 2.66 h 0.110 0.161 2.80 4.10 j 0.014 0.024 0.36 0.61 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane ?t? c s t u r j on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other inte llectual property. a listing of scillc?s pr oduct/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typical s? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 MJE5730/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
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